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Click here or scroll down to respond to this candidateCandidate's Name
Street Address Whitaker AvenuePhiladelphia, PA, Street Address
H (1)PHONE NUMBER AVAILABLEB EMAIL AVAILABLE"The only way to do great work is to love whatyou do." - Steve JobsEducationJune1997 Baccalaureat of secondary education deploma, Algeria. 19972001 Engineer in Electronics, The University MOULOUD MAMMERI, TIZI-OUZOU.20022005 Masters Degree (Magister) in Microelectronics, The University MOULOUD MAMMERI, TIZI-OUZOU, Algeria.20082012 Doctorate Degree in Microelectronics, University of MHAMED BOUGARA, BOUMERDES, Algeria.December-2017Habilitation to Supervise Research, University of MHAMED BOUGARA, BOUMERDES, Algeria.ExperienceInternships20072021 Researcher, at Microelectronics and Nanotechnologies Division, Center for Development of Advenced Technologies (CDTA), Algeria. Achievements:{ PCB Design using proteus and Kicad softwere{ Automation of characterization instruments using LabView: Precision Semiconductor Parameter Analyzer, LCR meter, Wafer probe station (Cascade), Scope, wave generator, electrometer ...ect.{ MOSFET devices characterization using Current-Voltage(I-V), Charge pumping(CP),Capacitan cevoltage (CV), On-the y measurements techniques OTFIT, OTF-two point, OTFOT... ect{ MOSFET devices reliability analysis such as: Negative bias temperature instability(NBTI), Radiation eect (Total ionizing dose TID).{ Metal oxide thin lm deposition and caracterization such as SnO2 and VO2.{ Actual research interests include CMOS technologies reliability,especially electrical characterization and modeling of negative bias temperature instability eect. 1/8Project manager:{ Investigation of microstructure defects responsible of MOS degradation,projet FNR : N 48/FCS /DMN/CDTA /Programme 2014-2016;{ International projet JEM-EUSO (coordinator of Algerian Photomultiplier group (2013- 2015)Articles ReviewsReviewer in: IEEE, Transactions on Electron Devices, TED Reviewer in : IEEE, Electron Letter EDL;Reviewer in : Journal of applied physics JAP;Reviewer in : IEEE, Transactions on Device andMaterials Reliability; Reviewer in : Elsevier, Microelectronics Reliability MR; Reviewer in : Electronics letter.Computer SkillsBasic : PythonIntermediate :SilvacoAdvanced :LabieW, Origin, proteus, KicdLanguagesEnglish IntermediateFrench AdvancedArabic AdvancedPublications and communicationsArticles in Peer-Reviewed Journals2021 Candidate's Name , Boualem Djezzar and Timlelt Hakima, Capacitance-Voltage Technique Based on Time Varying Magnetic Field for VDMOSFET-Part II: Measurements and Parameter Extractions, will be publicashed in IEEE Transactionson Transactions on Electron Devices,vol. 68, no.5, pp.1-8, May 2021..2/82020 Boualem Djezzar, Abdelmadjid Benabdelmoumene, Boumediene Zatout, Dhiaelhak Messaoud, Amel Chenouf, Candidate's Name , Mohamed Boubaaya, Hakima Timlel, Recovery investigation of NBTI-induced traps in n- MOSFET devices, Microelectronics Reliability, vol.110, p.113703, June 20202019 A.L. S. Hassein-Bey, Abdelkader Hassein- Bey, Candidate's Name ), Cosmic ray oriented performance studies for the JEMEUSO rst level trigger, Nuclear Inst. and Methods in Physics Research, A, (2017) 150-1632017 JEM EUSO Members (Candidate's Name ),Meteor studies in the framework of the JEM-EUSO program, Planetary and Space Science, Vol.143, pp.245- 255, Sep. 2017.2016 Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Candidate's Name , On the Circuit -level Reliability Degradation Due to AC NBTI Stress, IEEE Transactions on Device and Materials Reliability, vol. 16, no.3, pp. 290-297, Sept. 2016.2016 A Benabdelmoumene, B Djezzar, A Chenouf, Candidate's Name , Cherifa Tahanout,Boualem Djezzar, Abdelmadjid Benabdel- moumene, Amel Chenouf, Charge Pumping, Geometric Component and Degradation Parameters Extraction in MOSFET Devices, IEEE Transac- tions on Device and Materials Reliability, vol. 15, no.4, pp. 567-575, Dec. 2015.3/82015 M.S Merah, Becharia Nadji,Candidate's Name , Low magnetic eld Impact on NBTI degradation, Elsevier: Microelectronics Reliability, vol.55, no.9-10, pp. 14601463, Aug. 2015.2015 Boualem Djezzar, Candidate's Name , Boualem Djezzar, Abdelmadjid Benabdelmoumene, Bacharia Nadji and Youcef Kribes, Geometric Component in Constant-Amplitude Charge Pumping Characteristics of LOCOS-and LDD-MOSFET Devices, IEEE Transactions on Device and Materials Reliability, vol. 10, no. 4, March 2011.2011 Candidate's Name , Boualem Djezzar, and Bacharia Nadji, Modeling and Sim- ulation of Charge-Pumping Characteristics for LDD-MOSFET Devices with LOCOS Isolation, IEEE Transactions on electron Devices, vol. 57, no.11, pp. 2892-2901, Nov. 20102010 Candidate's Name , Boualem Djezzar, and Bacharia Nadji, Radiation Eect Evaluation in Eective Shortand Narrow Channel of LDD-Transistor with LOCOS-Isolation Using OTCP Method, IEEE Transactions on Device and Materials Reliability, vol. 10, no.1, pp.108-115, Mar. 2010. 4/82010 Boualem Djezzar, Candidate's Name , Using Oxide-Trap Charge-Pumping Method in Radiation Reliability Analysis of Short Lightly Doped Drain Transistor, IEEE Transactions on Device and Materials Reliability, vol.10, no.1, pp. 18-25, Mar. 2010.2009 Boualem Djezzar, Candidate's Name , and ArizkiMokrani, Why is oxide-trap charge pumping method appropriate for radiation-induced trap depiction in MOSFET?, IEEE Transactionson Deviceand Materials Reliability, vol. 9, no.2, pp. 222-230, Jun. 2009.International Communications2018 A.L. S. Hassein-Bey, Abdelkader Hassein- Bey Candidate's Name , Slimane Lafane, Samira Abdelli-Massaci, Mohamed El Amine Benamar, Sub- strate Eect on Electrical Properties of Vanadium Oxide Thin Film for Memristive Device Applications, IEEE-ICSE2018 Proc. 2018, Kuala Lumpur,Malaysia.2017 Candidate's Name , Cherifa Tahanout, Mohamed Boubaaya, Multi-Frequencies Low Field Spin Dependent Charge Pumping Technique for Defect Atomic Scale Identication, The 5th International IEEE Conference on Electri- cal Engineering Boumerdes (ICEE-B) October 29-31, 2017, Boumerdes, Algeria.2016 A.L.S.Hassein-Bey, Candidate's Name , Cherifa Tahanout, B. Djezzar, A. Benabdel- momene, A. Chenouf, D. Doumaz Using the charge pumping geometric component to extract NBTI induced mobility degradation, proceeding of IEEE International Integrated Reliability Workshop Final Report (IIRW), 11-15 Oct. 2015, pp.147150.2014 Candidate's Name , Karim Benmessai, Jean Michel Le Floch,Mohamed Boubaaya, Cherifa Tahanout,Boualem Drezzar, Abdelmadjid Benabdel- momene,Mohamed Goudjil, and Amel Chenouf, Investigation of NBTI Degradation on power VDMOS Transistors under Magnetic Field, pro- ceeding of IEEE International Integrated Reliability Workshop Final Report (IIRW), 12-16 Oct. 2014, pp.139-142.5/82012 Cherifa Tahanout, Candidate's Name , Boualem Djezzar, Karim, Benmassai, Abdelmadjid Benabdelmoumene, Mohamed, Goudjil, Djamila Doumaz, Abdelhak Feraht Hemida, Reaction-Diusion Model for interface traps induced by BTS stress including H+, H and H2 as Diusion Species, proceeding of IEEE, Design and Test Symposium (IDT), 16-18 Dec. 2014, pp.1-5.2014 Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmomene, Candidate's Name , Abdelmadjid Benabdelmoumene, Amel Chenouf,Mohamed Goudjil,Youcef Kribes, On the permanent components of negative bias temperature instability, 25th International Conference on Microelectronics (ICM), 15-18 Dec. 2013.2012 Amel Chenouf, Boualem Djezzar, Abdelmadjid Benadelmoumene, Candidate's Name , Deep experimental investigation of NBTI impact on CMOS inverter reliability, 24th International Conference on Microelectronics (ICM), 16-20 Dec. 2012. pp.1-4.2012 Abdelmadjid Benabdelmoumene, Boualem Djezzar, Candidate's Name , Amel Chenouf,Leonard Trombetta, Mohamed Kechouane, Two-points capaci- tancevoltage (TPCV) concept: A new method for NBTI characterization, IEEE International Integrated Reliability Workshop Final Report (IIRW), 14-18 Oct. 2012, pp.175-1782012 Candidate's Name , Boualem Djezzar, and Abdelmadjid Benabedelmoumene, On-TheFly Extraction Method for Interface, Oxide Traps andMobility Degradation Induced by NBTI Stress, proceeding of IEEE International Integrated Reliability Workshop Final Report (IIRW), 14-18 Oct. 2012, pp. 113-116.2012 Amel chenouf, Boualem Djezzar, Abdelmadjid Benabedelmoumene, Candidate's Name , Does PMOS VTH ShiftWholly Capture the Degradation of CMOS Inverter Circuit under DC NBTI?, proceeding of IEEE Interna- tional Integrated Reliability Workshop Final Report (IIRW), 14-18 Oct. 2012, pp. 191-1946/82012 Boualem Djezzar, Candidate's Name , Boualem Djezzar, Abdelmadjid Benabdelmoumene, and Amel Chenouf, An Accurate ExtractionMethodology for NBTI Induced Degradation Using Charge Pumping Based Methods,proceeding of IEEE International Conference on Microelectronics (ICM), 16-20 Dec. 2012, pp.1 - 4.2012 Boualem Djezzar, Candidate's Name , Abdelmadjid Benabdelmoumene, Geo- metriccomponent modeling in charge-pumping technique, proceeding of IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 4-7 July 2011, pp.1-52010 Candidate's Name participation: rst Algerian Winter School On Smart Card, December 19-23, 2010, Algeria2009 Boualem Djezzar, Candidate's Name , and Arezki Mokrani, Oxide-trap charge- pumping for radiation reliability issue in MOS devices, proceeding of IEEE Design and Technology of Integrated Systems in Nanoscal Era, 2009. DTIS-09, 6-9 April 2009, pp. 287-2922009 Boualem Djezzar, Candidate's Name , Arezki Mokrani, UsingOxide-Trap ChargePumping method in radiation reliability analysis of short lightly doped drain transistor, Radiation and Its Eects on Components and Systems (RADECS), 14-18 Sept. 2009, pp.54-60.7/82009 Boualem Djezzar, Candidate's Name , Arezki Mokrani, Oxide-trap charge- pumping for radiation reliability issue in MOS devices, 4th International Conference on Design and Technology of Integrated Systems in Nanoscal Era, 6-9 April 2009, pp. 287-292.2009 Abdelmadjid Benabdelmoumene, Boualem Djezzar,Candidate's Name , Rak Serhan, eet de recuit isochrone sur les transistors MOSFET irradies :vu par OTCP, 1 ere Sminaire National sur les Matriaux et leurs application SENAMAP-09, USTHB- Alger 7-9 Dec-2009.2007 Candidate's Name ,Inuence du traitement thermique haute temprature sur les proprits optiques des couches minces de SnO2 oral prsenta- tion:Conference Internationale sur les nergies Renouvelable le Dveloppe- ment durable, 21-24 MAI 2007, TLEMCEN2006 Candidate's Name ,Messaoud Boumaour, Razika Talaighil, Measurement of square resistance in situ of SnO2 : F thin lm with. Annealing at high temperature under air, oral presentation, International Conference in micro and nanotechnologies ICNMT 2006, pp.19-22 Nov 2006. TIZI-OUZOUPatents2016 Brevet INAPI: Tahi hakim,Rabhi Chak, Tahanout Cherifa, Dellaa Djamel, Timlelt Hakima, Djezzar Boualem, Dispositif dintgration des techniques de rsonances paramagntiques de spin dans un testeurs sous pointes INAPI-N :160529Technical Reports2017 Low Cost and Portable Electrically Detected Magnetic Resonance Spec- trometer for MOS Device Characterization, Technical rapport 2017, DOI: 10.13140/RG.PHONE NUMBER AVAILABLE2015 Implementation de la spectroscopie EDMR (Electricaly DetectedMagnetic resonance),Technical rapport,DOI:10.13140/RG.PHONE NUMBER AVAILABLE 8/8 |
